Original Part
Diode 30 V 1A Surface Mount M-FLAT (2.4x3.8)

Substitution Feasibility Conclusion
The devices are generally interchangeable in most common applications. However, careful evaluation is required for designs with stringent requirements for low leakage current or high-frequency performance.
Comparison Points
1. Reverse Leakage Current (Ir @ Vr): The CMS10I30A specifies 100 µA, while the PMEG3010EP specifies 1.5 mA. The latter exhibits a leakage current 15 times greater. Under high-temperature or high-reverse-voltage operating conditions, the PMEG3010EP will have significantly higher static power dissipation. This can lead to reduced circuit efficiency and increased temperature rise, making it unsuitable for power-critical designs.
2. Junction Capacitance (Cj): The CMS10I30A is rated at 82 pF @ 10V, compared to 170 pF @ 1V for the PMEG3010EP. The PMEG3010EP has a higher capacitance value, and it is measured at a lower test voltage (the actual difference at 10V would be even more pronounced). In switching applications, such as DC-DC converters, the PMEG3010EP will incur higher switching losses. This results in increased device heating, reduced system efficiency, and limits its usability at higher frequencies.
3. Parameter Test Conditions: The junction capacitance for the two devices is characterized at different test voltages (10V vs. 1V). This is not a trivial distinction. It suggests a potentially significant difference in their Capacitance-Voltage (C-V) characteristics, which directly impacts the accuracy of simulation and design based on the datasheet. The capacitance value listed for the PMEG3010EP at 1V is typically much higher than its value at actual operating voltages, requiring careful interpretation of the datasheet.
Analysis ID: 2962-37AF000
Based on part parameters and for reference only. Not to be used for procurement or production.
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