1. Different Forward Voltage (Vf) Test Conditions: The Vf (760mV) of the VS-MBR3045CTPBF is specified at a test current of 30A, whereas the MBR2545CTG’s Vf (620mV) is measured at 15A. Under the same 15A condition, the actual Vf of the Vishay device may be significantly lower than its rated value. Consequently, the actual conduction losses of both parts may be comparable, but a direct comparison of the nominal ratings would be misleading. 2. Reverse Leakage Current (Ir): The Ir of the MBR2545CTG (200µA @45V) is an order of magnitude lower than that of the VS-MBR3045CTPBF (1mA @45V). This indicates that the ON Semiconductor device offers lower leakage power dissipation and superior thermal stability when operating at elevated temperatures or near its rated voltage, benefiting overall system efficiency and temperature rise. 3. Maximum Junction Temperature (Tj): The MBR2545CTG is rated for 175°C, compared to 150°C for the VS-MBR3045CTPBF. The ON Semiconductor device provides greater operational margin in high-temperature environments or under high-power conditions, which may contribute to better long-term reliability. 4. Product Series Positioning: The MBR2545CTG belongs to ON Semiconductor’s SWITCHMODE™ series, which is optimized for high-frequency switching power supplies. Its parameter set—low Ir and high Tj—reflects a design emphasis on low loss and high reliability in switching applications.