1. Current and On-Resistance (Rds(on)) - IRFR2405: Rds(on) = 16mΩ at 56A (Tc) - IPD35N10S3L26ATMA1: Rds(on) = 24mΩ at 35A (Tc) - The IPD35N10S3L26ATMA1 exhibits significantly lower current handling capability and higher conduction losses (approximately +50%). Under the same load current, junction temperature rise will be more pronounced, potentially requiring derating or enhanced thermal management. 2. Gate Charge (Qg) and Switching Performance - IRFR2405: Qg = 110nC - IPD35N10S3L26ATMA1: Qg = 39nC - The IPD35N10S3L26ATMA1 offers faster switching speed and lower drive losses, making it suitable for high-frequency applications such as switch-mode power supplies. However, its higher input capacitance (Ciss) may require careful consideration in gate drive design. 3. Voltage Rating and Power Dissipation - IRFR2405: 55V / 110W - IPD35N10S3L26ATMA1: 100V / 71W - While the IPD35N10S3L26ATMA1 has a higher voltage rating, its lower maximum power dissipation limits its suitability in high-power applications. 4. Technology and Reliability - The IPD35N10S3L26ATMA1 utilizes OptiMOS™ technology and is AEC-Q101 qualified, offering superior high-temperature stability and reliability compared to the industrial-grade HEXFET® IRFR2405. - It is better suited for automotive or high-reliability environments, though system-level qualification requirements should be confirmed. Summary: The key distinctions lie in current capability, conduction loss, and power dissipation design. Any substitution must carefully evaluate the actual operating current, thermal conditions, and switching frequency requirements.