1. Reverse Leakage Current (Ir @ Vr) RBR3LAM30BTFTR: 80 µA @ 30V CMS01: 5 mA @ 30V The Toshiba part exhibits approximately 60 times higher leakage current, which will lead to significantly higher static power dissipation and heat generation. This may cause thermal runaway or failure to meet efficiency targets in low-power designs or high-temperature environments. 2. Operating Junction Temperature and Reliability Grade RBR3LAM30BTFTR: Max junction temperature 150°C, AEC-Q101 automotive qualified CMS01: Junction temperature range -40°C to 125°C, not automotive qualified The Rohm device is suitable for high-reliability automotive electronics and high-temperature environments (e.g., near engine compartments). The Toshiba variant only meets industrial/consumer temperature requirements, resulting in different long-term reliability design margins. 3. Forward Voltage Drop Not Clearly Specified CMS01 specifies Vf = 370mV @ 3A, while RBR3LAM30BTFTR does not list Vf under the same test conditions If the actual Vf of the Rohm device is significantly lower, substitution could affect power efficiency or thermal design. If higher, it may increase conduction losses. Actual measurement comparison is required for confirmation. 4. Differences in Package Thermal Performance Although both share the SOD-128 footprint, the internal structure and thermal paths of the “PMDTM” and “M-FLAT” packages may differ. Under full 3A load, variations in thermal resistance (not provided) could lead to different actual temperature rises, affecting long-term reliability and potentially necessitating re-evaluation through thermal simulation.