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GE12160CEA3
MOSFET 2N-CH 1200V 1.425KA MODUL
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Number
SC-GE1216-OSKDI7
manufacturer:
GE Aerospace
MPN#
SC-GE1216-OSKDI7
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Chassis Mount
    Qualification
    AEC-Q101
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Package / Case
    Module
    Technology
    Silicon Carbide (SiC)
    Configuration
    2 N-Channel (Half Bridge)
    Voltage - Clamping
    1200V (1.2kV)
    Vgs(th) (Max) @ Id
    4.5V @ 480mA
    Power - Max
    3.75kW
    Current - Continuous Drain (Id) @ 25°C
    1.425kA (Tc)
    Rds On (Max) @ Id, Vgs
    1.5mOhm @ 475A, 20V
    Gate Charge (Qg) (Max) @ Vgs
    3744nC @ 18V
    Input Capacitance (Ciss) (Max) @ Vds
    90000pF @ 600V
Document
Substitute Parts
    IRF7106
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    quantity 1
    price N/A
    IRF7102
    Infineon Technologies
    MOSFET 2N-CH 50V 2A 8SO
    quantity 1
    price N/A
    ZDM4206NTA
    Diodes Incorporated
    MOSFET 2N-CH 60V 1A SM8
    quantity 1
    price N/A
    NDC7002N
    onsemi
    MOSFET 2N-CH 50V 0.51A SSOT6
    quantity 1
    price USD $0.68
    NDC7003P
    onsemi
    MOSFET 2P-CH 60V 0.34A SSOT6
    quantity 1
    price USD $0.50
inventory 1612
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8799
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