Loading...

IRFD110
MOSFET N-CH 100V 1A 4DIP
PDF
Property Bar
Number
SC-IRFD11-KDWRHG
manufacturer:
Vishay Siliconix
MPN#
SC-IRFD11-KDWRHG
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    10V
    Technology
    MOSFET (Metal Oxide)
    Vgs (Max)
    ±20V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Part Status
    Obsolete
    Voltage - Isolation
    100 V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Package / Case
    4-DIP (0.300", 7.62mm)
    Power Dissipation (Max)
    1.3W (Ta)
    Current - Continuous Drain (Id) @ 25°C
    1A (Ta)
    Gate Charge (Qg) (Max) @ Vgs
    8.3 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds
    180 pF @ 25 V
    Rds On (Max) @ Id, Vgs
    540mOhm @ 600mA, 10V
    Supplier Device Package
    4-HVMDIP
Document
Substitute Parts
    IRF510
    Vishay Siliconix
    MOSFET N-CH 100V 5.6A TO220AB
    quantity 1
    price N/A
    IRF9510
    Vishay Siliconix
    MOSFET P-CH 100V 4A TO220AB
    quantity 1
    price N/A
    IRFD9220
    Vishay Siliconix
    MOSFET P-CH 200V 560MA 4DIP
    quantity 1
    price N/A
    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
    quantity 1
    price N/A
    IRFD9113
    Vishay Siliconix
    MOSFET P-CH 60V 600MA 4DIP
    quantity 1
    price N/A
inventory 1600
minimum
1
package
Bulk
delivery time
Shipment within 48 hours
Please send an inquiry form, we will reply immediately
Contact Name
email
corporate name
country
quantity
content
Delivery & Payment

(0 Items)

it was empty.