IRLU3705ZPBF Infineon Technologies

IRLU3705ZPBF

N-Channel 55 V 42A (Tc) 130W (Tc) Through Hole IPAK (TO-251AA)

Images are for reference only.

SkyChip No.

HVHUF-IRLU3705ZPBFT

OPN#

IRLU3705ZPBF

Manufacturer

Description

MOSFET N-CH 55V 42A IPAK

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IRLR3705ZPbF, IRLU3705ZPbF

· IRLR3705Z Saber Model

· Package Drawing Update 19/Aug/2015

· 55V N-Channel TrenchFET Power MOSFET with Low On-Resistance

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited)
REACH Compliance	REACH SVHC Free
US ECCN	EAR99

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

278 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Technology	MOSFET (Metal Oxide)
Series	HEXFET®
RDS(on) Specification Drive Voltage	4.5V, 10V
Power Dissipation (Max)	130W (Tc)
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	IPAK (TO-251AA)
Continuous Drain Current @ 25°C	42A (Tc)
Input Capacitance (Max.) @ Vds	2900 pF @ 25 V
Gate-Source Voltage (Max.)	±16V
Gate Threshold Voltage (Max.) @ ID	3V @ 250µA
Gate Charge (Max.) @ Vgs	66 nC @ 5 V
FET Type	N-Channel
Drain-Source Voltage	55 V
Drain Source On-Resistance (Max.) @ ID, Vgs	8mOhm @ 42A, 10V