Name: IRFRC20PBF Vishay Siliconix
Brand: Vishay Siliconix
SKU: I5TKZ-IRFRC20PBFT
Price: 0.7 USD
Availability: InStock

IRFRC20PBF

N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount DPAK

Images are for reference only.

SkyChip No.

I5TKZ-IRFRC20PBFT

OPN#

IRFRC20PBF

Manufacturer

Description

MOSFET N-CH 600V 2A DPAK

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

15 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· IRFRC20, IRFUC20, SiHFRC20, SiHFUC20

· Mult Devs Capacity Transfer 15/May/2025

· A 200V N-Channel Power MOSFET Featuring Low On-Resistance & Fast Switching for Power Management

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited)
REACH Compliance	REACH Non-Compliant (SVHC > 0.1%)
RoHS Status	RoHS 3 (2015/863) Compliant
US ECCN	EAR99

Available Qty 2133

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$0.7008

Ext. Price:$0.7008

Qty.	Unit Price	Ext. Price
1	$0.7008	$0.7008

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	2.5W (Ta), 42W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	DPAK
Base Product Number	IRFRC20
Input Capacitance (Max.) @ Vds	350 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	18 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.4Ohm @ 1.2A, 10V
Continuous Drain Current @ 25°C	2A (Tc)