Loading...

AMTP65H150G4PS
GAN FET N-CH 650V TO-220
Property Bar
Number
SC-AMTP65-F0EMSY
manufacturer:
Analog Power Inc.
MPN#
SC-AMTP65-F0EMSY
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    10V
    Vgs (Max)
    ±20V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Package / Case
    TO-220-3
    Supplier Device Package
    TO-220AB
    Vgs(th) (Max) @ Id
    1V @ 250µA
    Technology
    GaNFET (Gallium Nitride)
    Power Dissipation (Max)
    300W (Tc)
    Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 6 V
    Current - Continuous Drain (Id) @ 25°C
    13A (Tc)
    Rds On (Max) @ Id, Vgs
    150mOhm @ 10A, 10V
    Input Capacitance (Ciss) (Max) @ Vds
    598 pF @ 400 V
Substitute Parts
    IRF510
    Vishay Siliconix
    MOSFET N-CH 100V 5.6A TO220AB
    quantity 1
    price N/A
    IRF9510
    Vishay Siliconix
    MOSFET P-CH 100V 4A TO220AB
    quantity 1
    price N/A
    IRFD9220
    Vishay Siliconix
    MOSFET P-CH 200V 560MA 4DIP
    quantity 1
    price N/A
    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
    quantity 1
    price N/A
    IRFD110
    Vishay Siliconix
    MOSFET N-CH 100V 1A 4DIP
    quantity 1
    price N/A
inventory 1601
minimum
1
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
6.61
6.61
50
5.28
264
100
4.72
472
500
4.17
2085
1000
3.75
3750
Please send an inquiry form, we will reply immediately
Contact Name
email
corporate name
country
quantity
content
Delivery & Payment

(0 Items)

it was empty.