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EPC2007C
GANFET N-CH 100V 6A DIE OUTLINE
PDF
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Number
SC-EPC200-3681PK
manufacturer:
EPC
MPN#
SC-EPC200-3681PK
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    No Load Power Consumption
    -
    Package / Case
    Surface Mount
    FET Type
    N-Channel
    Voltage - Output
    5V
    Operating Temperature
    -40°C ~ 150°C (TJ)
    Package / Case
    Die
    Voltage - Isolation
    100 V
    Current - Continuous Drain (Id) @ 25°C
    6A (Ta)
    Technology
    GaNFET (Gallium Nitride)
    Vgs (Max)
    +6V, -4V
    Vgs(th) (Max) @ Id
    2.5V @ 1.2mA
    Part Status
    Not For New Designs
    Gate Charge (Qg) (Max) @ Vgs
    2.2 nC @ 5 V
    Rds On (Max) @ Id, Vgs
    30mOhm @ 6A, 5V
    Input Capacitance (Ciss) (Max) @ Vds
    220 pF @ 50 V
Document
Substitute Parts
    IRF510
    Vishay Siliconix
    MOSFET N-CH 100V 5.6A TO220AB
    quantity 1
    price N/A
    IRF9510
    Vishay Siliconix
    MOSFET P-CH 100V 4A TO220AB
    quantity 1
    price N/A
    IRFD9220
    Vishay Siliconix
    MOSFET P-CH 200V 560MA 4DIP
    quantity 1
    price N/A
    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
    quantity 1
    price N/A
    IRFD110
    Vishay Siliconix
    MOSFET N-CH 100V 1A 4DIP
    quantity 1
    price N/A
inventory 11930
minimum
1
package
Cut Tape (CT) & Digi-Reel®
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
3.08
3.08
10
2
20
100
1.38
138
500
1.16
580
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