FCH170N60 onsemi

FCH170N60

N-Channel 600 V 22A (Tc) 227W (Tc) Through Hole TO-247-3

Images are for reference only.

SkyChip No.

PR4DV-FCH170N60T

OPN#

FCH170N60

Manufacturer

onsemi

Description

MOSFET N-CH 600V 22A TO247-3

Datasheet

Lifecycle Status

Last Time Buy

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCH170N60

· onsemi RoHS

· onsemi REACH

· Material Declaration FCH170N60

· Mult DEV EOL 08/Jan/2025

· Dimension/Color Change 24/Feb/2021

· Logo 17/Aug/2017

· Mold Compound Change 17/Dec/2021

· Packing quantity increase 28/Dec/2020

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:APT34M60B

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SkyChip No.:3LH6P-SIHG22N60AE-GE3T

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
APT34M60B	Microchip Technology	0	$11.48	74712-APT34M60BT
IPW60R160C6FKSA1	Infineon Technologies	22	$4.79	WSPF1-IPW60R160C6FKSA1T
IPW65R150CFDAFKSA1	Infineon Technologies	396	$3.44	60K63-IPW65R150CFDAFKSA1T
IXKH20N60C5	IXYS	0	$0	A3G94-IXKH20N60C5T
R6022YNZ4C13	Rohm Semiconductor	592	$6	SNGBX-R6022YNZ4C13T
SCT3120ALGC11	Rohm Semiconductor	0	$9.77	8A33K-SCT3120ALGC11T
SIHG22N60AE-GE3	Vishay Siliconix	0	$2.79	3LH6P-SIHG22N60AE-GE3T

Total Stock: 161

Available Qty 86

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$6.3360

Ext. Price:$6.3360

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$6.3360	$6.3360
30	$3.6285	$108.8545
120	$3.0336	$364.0320

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SuperFET® II
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	227W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247-3
Base Product Number	FCH170
Input Capacitance (Max.) @ Vds	2860 pF @ 380 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	3.5V @ 250µA
Gate Charge (Max.) @ Vgs	55 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	170mOhm @ 11A, 10V
Continuous Drain Current @ 25°C	22A (Tc)

Ciss (pF)	2150
Configuration	Single
Coss (pF)	60
Crss (pF)	2.65
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	22
Package Type	TO-247-3
PD (Max.) (W)	227
Qg @ VGS=10V (nC)	42
Qgd @ VGS=4.5V (nC)	11
Qrr (nC)	6200
RDS(on) (Max.) @ VGS=10V (mΩ)	170
V(BR)DSS (Min.) (V)	600
VGS (Max.) (V)	DC: ±20, AC: ±30
Vgs(th) (Max.) (V)	3.5