FCP36N60N onsemi

FCP36N60N

N-Channel 600 V 36A (Tc) 312W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

TIQSF-FCP36N60NT

OPN#

FCP36N60N

Manufacturer

onsemi

Description

MOSFET N-CH 600V 36A TO220-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCP36N60N

· onsemi RoHS

· onsemi REACH

· Material Declaration FCP36N60N

· Mult Dev EOL 29/Mar/2022

· Logo 17/Aug/2017

· MFG Site Addition 09/Mar/2020

· Mult Devices 24/Oct/2017

· Tape and Box/Reel Barcode Update 07/Aug/2014

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:NTP125N65S3H

Manufacturer:onsemi

Availability:786

Pricing$2.57

SkyChip No.:Y91B9-NTP125N65S3HT

Part Number:STP40N60M2

Manufacturer:STMicroelectronics

Availability:0

Pricing$5.79

SkyChip No.:VPM15-STP40N60M2T

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
NTP125N65S3H	onsemi	786	$2.57	Y91B9-NTP125N65S3HT
STP40N60M2	STMicroelectronics	0	$5.79	VPM15-STP40N60M2T

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

108 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SupreMOS™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	312W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FCP36N60
Input Capacitance (Max.) @ Vds	4785 pF @ 100 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	112 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	90mOhm @ 18A, 10V
Continuous Drain Current @ 25°C	36A (Tc)

Ciss (pF)	3595
Configuration	Single
Coss (pF)	149
Crss (pF)	4
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	36
Package Type	TO-220-3
PD (Max.) (W)	312
Qg @ VGS=10V (nC)	86
Qgd @ VGS=4.5V (nC)	26.4
Qrr (nC)	10000
RDS(on) (Max.) @ VGS=10V (mΩ)	90
V(BR)DSS (Min.) (V)	600
VGS (Max.) (V)	±30
Vgs(th) (Max.) (V)	4