FCP650N80Z onsemi

FCP650N80Z

N-Channel 800 V 10A (Tc) 162W (Tc) Through Hole TO-220

Images are for reference only.

SkyChip No.

3XVGG-FCP650N80ZT

OPN#

FCP650N80Z

Manufacturer

onsemi

Description

MOSFET N-CH 800V 10A TO220

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCP650N80Z Datasheet

· onsemi RoHS

· onsemi REACH

· Mult Dev EOL 30/Sep/2022

· Logo 17/Aug/2017

· Mat 9-29-22

· Mult Devices 24/Oct/2017

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Not Applicable
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 (2015/863) Compliant
US ECCN	EAR99

Possible Alternative Parts

Part Number:FCP400N80Z

Manufacturer:onsemi

Availability:832

Pricing$3.55

SkyChip No.:W4N8M-FCP400N80ZT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
FCP400N80Z	onsemi	832	$3.55	W4N8M-FCP400N80ZT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

386 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SuperFET® II
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	162W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220
Base Product Number	FCP650
Input Capacitance (Max.) @ Vds	1565 pF @ 100 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 800µA
Gate Charge (Max.) @ Vgs	35 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	650mOhm @ 4A, 10V
Continuous Drain Current @ 25°C	10A (Tc)

Ciss (pF)	1178
Configuration	Single
Coss (pF)	36
Crss (pF)	0.84
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	10
Package Type	TO-220-3
PD (Max.) (W)	162
Qg @ VGS=10V (nC)	27
Qgd @ VGS=4.5V (nC)	11
Qrr (nC)	5900
RDS(on) (Max.) @ VGS=10V (mΩ)	650
V(BR)DSS (Min.) (V)	800
VGS (Max.) (V)	DC: ±20, AC: ±30
Vgs(th) (Max.) (V)	4.5