FCPF125N65S3 onsemi

FCPF125N65S3

N-Channel 650 V 24A (Tc) 38W (Tc) Through Hole TO-220F

Images are for reference only.

SkyChip No.

R7AHA-FCPF125N65S3T

OPN#

FCPF125N65S3

Manufacturer

onsemi

Description

MOSFET N-CH 650V 24A TO220F

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCPF125N65S3

· onsemi RoHS

· onsemi REACH

· Material Declaration FCPF125N65S3

· SuperFet Datasheet Chg 30/Jul/2019

· Logo 17/Aug/2017

· Assembly and Test Qualification 26/Jul/2023

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:IPA60R099C7XKSA1

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SkyChip No.:TSM60NE200CIT C0G

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IPA60R099C7XKSA1	Infineon Technologies	113	$5.01	ZFULF-IPA60R099C7XKSA1T
TSM60NC196CI C0G	Taiwan Semiconductor Corporation	0	$3.85	FJ1N5-TSM60NC196CI-C0GT
TSM60NE110CIT C0G	Taiwan Semiconductor Corporation	0	$7.78	27DTO-TSM60NE110CIT-C0GT
TSM60NE145CIT C0G	Taiwan Semiconductor Corporation	0	$4.81	SPIJE-TSM60NE145CIT-C0GT
TSM60NE180CIT C0G	Taiwan Semiconductor Corporation	0	$3.2	9W1WW-TSM60NE180CIT-C0GT
TSM60NE200CIT C0G	onsemi	0	$3.8	TSM60NE200CIT C0G

Total Stock: 409

Available Qty 218

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$4.6944

Ext. Price:$4.6944

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$4.6944	$4.6944
50	$2.6340	$131.7024
100	$2.4284	$242.8416
500	$2.2415	$1120.7710
1000	$2.1560	$2156.0450

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SuperFET® III
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	38W (Tc)
Package / Case	TO-220-3 Full Pack
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220F
Base Product Number	FCPF125
Input Capacitance (Max.) @ Vds	1790 pF @ 400 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 2.4mA
Gate Charge (Max.) @ Vgs	44 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	125mOhm @ 12A, 10V
Continuous Drain Current @ 25°C	24A (Tc)

Ciss (pF)	1790
Configuration	Single
Coss (pF)	40
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	24
Package Type	TO-220-3 FullPak
PD (Max.) (W)	38
Qg @ VGS=10V (nC)	44
Qgd @ VGS=4.5V (nC)	19
Qrr (nC)	6360
RDS(on) (Max.) @ VGS=10V (mΩ)	125
V(BR)DSS (Min.) (V)	650
VGS (Max.) (V)	±30
Vgs(th) (Max.) (V)	4.5