FDB024N08BL7 onsemi

FDB024N08BL7

N-Channel 80 V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

Images are for reference only.

SkyChip No.

HPEJD-FDB024N08BL7TR

OPN#

FDB024N08BL7

Manufacturer

onsemi

Description

MOSFET N-CH 80V 120A TO263-7

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

56 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FDB024N08BL7

· onsemi RoHS

· Material Declaration FDB024N08BL7

· Description Chg 01/Apr/2016

· Logo 17/Aug/2017

· Mult Dev Assembly 08/Jan/2024

· Mult Devices 24/Oct/2017

· TO263 31/Aug/2016

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:IPB019N08N3GATMA1

Manufacturer:Infineon Technologies

Availability:0

Pricing$5.64

SkyChip No.:ICBAA-IPB019N08N3GATMA1TR

Part Number:IPB030N08N3GATMA1

Manufacturer:Infineon Technologies

Availability:755

Pricing$4.55

SkyChip No.:6E2AZ-IPB030N08N3GATMA1TR

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IPB019N08N3GATMA1	Infineon Technologies	0	$5.64	ICBAA-IPB019N08N3GATMA1TR
IPB030N08N3GATMA1	Infineon Technologies	755	$4.55	6E2AZ-IPB030N08N3GATMA1TR

Total Stock: 5686

Available Qty 3041

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$5.0112

Ext. Price:$5.0112

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$5.0112	$5.0112
10	$3.5645	$35.6448
100	$2.5122	$251.2224

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	PowerTrench®
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	246W (Tc)
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	TO-263-7
Base Product Number	FDB024
Input Capacitance (Max.) @ Vds	13530 pF @ 40 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 250µA
Gate Charge (Max.) @ Vgs	178 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	80 V
Drain Source On-Resistance (Max.) @ ID, Vgs	2.4mOhm @ 100A, 10V
Continuous Drain Current @ 25°C	120A (Tc)

Ciss (pF)	10170
Configuration	Single
Coss (pF)	1670
Crss (pF)	35
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	229
Package Type	D2PAK-7 / TO-263-7
PD (Max.) (W)	246
Qg @ VGS=10V (nC)	137
Qgd @ VGS=4.5V (nC)	28
Qrr (nC)	112
RDS(on) (Max.) @ VGS=10V (mΩ)	2.4
V(BR)DSS (Min.) (V)	80
VGS (Max.) (V)	±20
Vgs(th) (Max.) (V)	4.5