FDD9410L-F085 onsemi

FDD9410L-F085

N-Channel 40 V 50A (Tc) 75W (Tc) Surface Mount TO-252 (DPAK)

Images are for reference only.

SkyChip No.

1CDC8-FDD9410L-F085TR

OPN#

FDD9410L-F085

Manufacturer

onsemi

Description

MOSFET N-CHANNEL 40V 50A TO252

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FDD9410L_F085

· onsemi RoHS

· Material Declaration FDD9410L-F085

· Logo 17/Aug/2017

· Mult Dev A/T 18/Aug/2021

· Mult Devices 24/Oct/2017

· On Semiconductor Automotive F085 Status Check

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 (2015/863) Compliant
US ECCN	EAR99

Possible Alternative Parts

Part Number:STD120N4LF6

Manufacturer:STMicroelectronics

Availability:0

Pricing$2.73

SkyChip No.:QQM7V-STD120N4LF6TR

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
STD120N4LF6	STMicroelectronics	0	$2.73	QQM7V-STD120N4LF6TR

Standard Supply

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tape & Reel

Supply Chain Inventory

201 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Qualification	AEC-Q101
Power Dissipation (Max)	75W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	TO-252 (DPAK)
Base Product Number	FDD9410
Input Capacitance (Max.) @ Vds	1960 pF @ 20 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	3V @ 250µA
Gate Charge (Max.) @ Vgs	43 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	40 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.2mOhm @ 50A, 10V
Continuous Drain Current @ 25°C	50A (Tc)

Ciss (pF)	1960
Configuration	Single
Coss (pF)	615
Crss (pF)	41
Description	N-Channel, Low-medium Voltage MOSFET, Logic Level
ID (Max.) (A)	50
Package Type	DPAK-3 / TO-252-3
PD (Max.) (W)	75
Qg @ VGS=10V (nC)	29
Qgd @ VGS=4.5V (nC)	5
Qrr (nC)	36
RDS(on) (Max.) @ VGS=10V (mΩ)	4.2
RDS(on) (Max.) @ VGS=4.5V (mΩ)	6.5
V(BR)DSS (Min.) (V)	40
VGS (Max.) (V)	±20
Vgs(th) (Max.) (V)	3