FDP10N60NZ onsemi

FDP10N60NZ

N-Channel 600 V 10A (Tc) 185W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

7PBBN-FDP10N60NZT

OPN#

FDP10N60NZ

Manufacturer

onsemi

Description

MOSFET N-CH 600V 10A TO220-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FDP(F)10N60NZ

· onsemi RoHS

· Material Declaration FDP10N60NZ

· Mult Dev EOL 23/Dec/2021

· Logo 17/Aug/2017

· Mult Dev Asembly Chg 7/May/2020

· Mult Devices 24/Oct/2017

· Tape and Box/Reel Barcode Update 07/Aug/2014

· TO220B03 Pkg Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:AOT10N60

Manufacturer:Alpha & Omega Semiconductor Inc.

Availability:503

Pricing$2.33

SkyChip No.:O50HC-AOT10N60T

Part Number:AOT10N60L

Manufacturer:Alpha & Omega Semiconductor Inc.

Availability:0

Pricing$0

SkyChip No.:4QVSR-AOT10N60LT

Part Number:STP9N60M2

Manufacturer:STMicroelectronics

Availability:0

Pricing$1.91

SkyChip No.:232FQ-STP9N60M2T

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
AOT10N60	Alpha & Omega Semiconductor Inc.	503	$2.33	O50HC-AOT10N60T
AOT10N60L	Alpha & Omega Semiconductor Inc.	0	$0	4QVSR-AOT10N60LT
STP9N60M2	STMicroelectronics	0	$1.91	232FQ-STP9N60M2T

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

445 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	UniFET-II™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	185W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FDP10
Input Capacitance (Max.) @ Vds	1475 pF @ 25 V
Gate-Source Voltage (Max.)	±25V
Gate Threshold Voltage (Max.) @ ID	5V @ 250µA
Gate Charge (Max.) @ Vgs	30 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	750mOhm @ 5A, 10V
Continuous Drain Current @ 25°C	10A (Tc)

Ciss (pF)	1110
Configuration	Single
Coss (pF)	130
Crss (pF)	10
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	10
Package Type	TO-220-3
PD (Max.) (W)	185
Qg @ VGS=10V (nC)	23
Qgd @ VGS=4.5V (nC)	8
Qrr (nC)	2000
RDS(on) (Max.) @ VGS=10V (mΩ)	750
V(BR)DSS (Min.) (V)	600
VGS (Max.) (V)	±25
Vgs(th) (Max.) (V)	5