FDP3682 onsemi

FDP3682

N-Channel 100 V 6A (Ta), 32A (Tc) 95W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

81YSA-FDP3682T

OPN#

FDP3682

Manufacturer

onsemi

Description

MOSFET N-CH 100V 6A/32A TO220-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

10 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FDB3682, FDP3682

· onsemi RoHS

· Material Declaration FDP3682

· Logo 17/Aug/2017

· Mult Dev Asembly Chg 7/May/2020

· Mult Devices 24/Oct/2017

· TO220B03 Pkg Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Total Stock: 2329

Available Qty 1246

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$0.9696

Ext. Price:$0.9696

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$0.9696	$0.9696
50	$0.8373	$41.8656
100	$0.8342	$83.4240
500	$0.8133	$406.6270
1000	$0.8047	$804.7200
2000	$0.7747	$1549.4400

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	PowerTrench®
RDS(on) Specification Drive Voltage	6V, 10V
Power Dissipation (Max)	95W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FDP36
Input Capacitance (Max.) @ Vds	1250 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	28 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	100 V
Drain Source On-Resistance (Max.) @ ID, Vgs	36mOhm @ 32A, 10V
Continuous Drain Current @ 25°C	6A (Ta), 32A (Tc)

Ciss (pF)	1250
Configuration	Single
Coss (pF)	190
Crss (pF)	45
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	32
Package Type	TO-220-3
PD (Max.) (W)	95
Qg @ VGS=10V (nC)	18.5
Qgd @ VGS=4.5V (nC)	4.6
Qrr (nC)	90
RDS(on) (Max.) @ VGS=10V (mΩ)	36
V(BR)DSS (Min.) (V)	100
VGS (Max.) (V)	±20
Vgs(th) (Max.) (V)	4