FQP4N90C onsemi

FQP4N90C

N-Channel 900 V 4A (Tc) 140W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

T9X7C-FQP4N90CT

OPN#

FQP4N90C

Manufacturer

onsemi

Description

MOSFET N-CH 900V 4A TO220-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FQPF4N90C Datasheet

· onsemi RoHS

· Material Declaration FQP4N90C

· Mult Dev EOL 21/Dec/2021

· Logo 17/Aug/2017

· Passivation Material 26/June/2007

· MFG Site Addition 09/Mar/2020

· Tape and Box/Reel Barcode Update 07/Aug/2014

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:FQP9N90C

Manufacturer:onsemi

Availability:879

Pricing$4.97

SkyChip No.:5Y04P-FQP9N90CT

Part Number:STP3NK90Z

Manufacturer:STMicroelectronics

Availability:314

Pricing$2.65

SkyChip No.:3WRUK-STP3NK90ZT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
FQP9N90C	onsemi	879	$4.97	5Y04P-FQP9N90CT
STP3NK90Z	STMicroelectronics	314	$2.65	3WRUK-STP3NK90ZT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

214 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	QFET®
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	140W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FQP4
Input Capacitance (Max.) @ Vds	960 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	5V @ 250µA
Gate Charge (Max.) @ Vgs	22 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	900 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.2Ohm @ 2A, 10V
Continuous Drain Current @ 25°C	4A (Tc)

Ciss (pF)	740
Configuration	Single
Coss (pF)	65
Crss (pF)	5.6
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	4
Package Type	TO-220-3
PD (Max.) (W)	140
Qg @ VGS=10V (nC)	17
Qgd @ VGS=4.5V (nC)	7.5
Qrr (nC)	3500
RDS(on) (Max.) @ VGS=10V (mΩ)	4200
V(BR)DSS (Min.) (V)	900
VGS (Max.) (V)	±30
Vgs(th) (Max.) (V)	5