IAUA180N04S5N012AUMA1 Infineon Technologies

IAUA180N04S5N012AUMA1

N-Channel 40 V 180A (Tc) 125W (Tc) Surface Mount PG-HSOF-5-2

Images are for reference only.

SkyChip No.

TKC5O-IAUA180N04S5N012AUMA1TR

OPN#

IAUA180N04S5N012AUMA1

Manufacturer

Description

MOSFET N-CH 40V 180A HSOF-5-1

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

39 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IAUA180N04S5N012

· RoHS Certificate

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	3 (168 Hours @ ≤ 30°C/60% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1311

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$2.8128

Ext. Price:$2.8128

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	OptiMOS™ 5
RDS(on) Specification Drive Voltage	7V, 10V
Qualification	AEC-Q101
Power Dissipation (Max)	125W (Tc)
Package / Case	5-PowerSFN
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PG-HSOF-5-2
Base Product Number	IAUA180
Input Capacitance (Max.) @ Vds	6158 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	3.4V @ 70µA
Gate Charge (Max.) @ Vgs	100 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	40 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.2mOhm @ 90A, 10V
Continuous Drain Current @ 25°C	180A (Tc)

Description	40V Enhancement Mode Power MOSFET
ID @25°C (Max.)	180A
Package Features	Super Low-ohmic Package for Highest Power Density
Package Type	sTOLL
QG @10V (Max.)	100nC
QG @10V (Typ.)	75nC
RDS(on) @10V (Max.)	1.2mΩ
Technology	OptiMOS™5
VGS(th) (Max.)	3.4V
VGS(th) (Min.)	2.2V
VGS(th) (Typ.)	2.8V