IPD70N03S4L04ATMA1 Infineon Technologies

IPD70N03S4L04ATMA1

N-Channel 30 V 70A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11

Images are for reference only.

SkyChip No.

S6YLO-IPD70N03S4L04ATMA1TR

OPN#

IPD70N03S4L04ATMA1

Manufacturer

Description

MOSFET N-CH 30V 70A TO252-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

9 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IPD70N03S4L-04

· RoHS Certificate

· Mult Dev Wafer Fab 12/Feb/2019

· Cover Tape Width Cancellation 14/Jul/2015

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1337

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$0.7584

Ext. Price:$0.7584

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
RDS(on) Specification Drive Voltage	4.5V, 10V
Qualification	AEC-Q101
Power Dissipation (Max)	68W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PG-TO252-3-11
Base Product Number	IPD70
Input Capacitance (Max.) @ Vds	3300 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±16V
Gate Threshold Voltage (Max.) @ ID	2.2V @ 30µA
Gate Charge (Max.) @ Vgs	48 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	30 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.3mOhm @ 70A, 10V
Continuous Drain Current @ 25°C	70A (Tc)

Description	30V Enhancement Mode Power MOSFET
ID @25°C (Max.)	70A
Package Type	DPAK
QG @10V (Max.)	48nC
QG @10V (Typ.)	37nC
RDS(on) @10V (Max.)	4.3mΩ
Technology	OptiMOS™T2
VGS(th) (Max.)	2.2V
VGS(th) (Min.)	1V
VGS(th) (Typ.)	1.5V