IPW60R045CPAFKSA1 Infineon Technologies

IPW60R045CPAFKSA1

N-Channel 600 V 60A (Tc) 431W (Tc) Through Hole PG-TO247-3

Images are for reference only.

SkyChip No.

RG99K-IPW60R045CPAFKSA1T

OPN#

IPW60R045CPAFKSA1

Manufacturer

Description

MOSFET N-CH 600V 60A TO247-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

15 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IPW60R045CPA

· RoHS Certificate

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 500

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$15.6672

Ext. Price:$15.6672

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	CoolMOS™
RDS(on) Specification Drive Voltage	10V
Qualification	AEC-Q101
Power Dissipation (Max)	431W (Tc)
Package / Case	TO-247-3
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	PG-TO247-3
Base Product Number	IPW60R045
Input Capacitance (Max.) @ Vds	6800 pF @ 100 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	3.5V @ 3mA
Gate Charge (Max.) @ Vgs	190 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	45mOhm @ 44A, 10V
Continuous Drain Current @ 25°C	60A (Tc)

Description	600V MOSFET for Hard Switching Topologies & PFC Boost Stages
ID @25°C (Max.)	60A
Package Type	TO247
QG @10V (Max.)	150nC
Technology	CoolMOS™ CPA
VGS(th) (Max.)	3.5V
VGS(th) (Min.)	2.5V