IRF1405STRLPBF Infineon Technologies

IRF1405STRLPBF

N-Channel 55 V 131A (Tc) 200W (Tc) Surface Mount D2PAK

Images are for reference only.

SkyChip No.

PH7YD-IRF1405STRLPBFTR

OPN#

IRF1405STRLPBF

Manufacturer

Description

MOSFET N-CH 55V 131A D2PAK

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IRF1405(S,L)PbF

· IR Part Numbering System

· Barcode Label Update 24/Feb/2017

· Packing Material Update 16/Sep/2016

· High-Current N-Channel Power MOSFET with Low On-Resistance & Fast Switching

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 625

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$1.5648

Ext. Price:$1.5648

Qty.	Unit Price	Ext. Price
1	$1.5648	$1.5648
10	$1.2634	$12.6336

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	HEXFET®
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	200W (Tc)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	D2PAK
Base Product Number	IRF1405
Input Capacitance (Max.) @ Vds	5480 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	260 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	55 V
Drain Source On-Resistance (Max.) @ ID, Vgs	5.3mOhm @ 101A, 10V
Continuous Drain Current @ 25°C	131A (Tc)