IRFPE50PBF Vishay Siliconix

IRFPE50PBF

N-Channel 800 V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC

Images are for reference only.

SkyChip No.

FZ8PU-IRFPE50PBFT

OPN#

IRFPE50PBF

Manufacturer

Description

MOSFET N-CH 800V 7.8A TO247-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

15 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IRFPE50

· Mosfet Mfg Add 28/Sep/2020

· Mult Devs Capacity Transfer 15/May/2025

· Packing Tube Design 19/Sep/2019

· High Voltage N-Channel Power MOSFET for Robust Switching Applications

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 216

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$3.2640

Ext. Price:$3.2640

Qty.	Unit Price	Ext. Price
1	$3.2640	$3.2640
500	$3.2400	$1620.0000

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	190W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247AC
Base Product Number	IRFPE50
Input Capacitance (Max.) @ Vds	3100 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	200 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.2Ohm @ 4.7A, 10V
Continuous Drain Current @ 25°C	7.8A (Tc)