IRLR3114ZTRPBF Infineon Technologies

IRLR3114ZTRPBF

N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

Images are for reference only.

SkyChip No.

P3T9A-IRLR3114ZTRPBFTR

OPN#

IRLR3114ZTRPBF

Manufacturer

Description

MOSFET N-CH 40V 42A DPAK

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IRL(R,U)3114ZPBF

· Moisture Bag and Anti-Static bag elimination 15/Apr/2024

· Barcode Label Update 24/Feb/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 3532

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$1.0080

Ext. Price:$1.0080

Qty.	Unit Price	Ext. Price
1	$1.0080	$1.0080
10	$0.5462	$5.4624

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	HEXFET®
RDS(on) Specification Drive Voltage	4.5V, 10V
Power Dissipation (Max)	140W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	TO-252AA (DPAK)
Base Product Number	IRLR3114
Input Capacitance (Max.) @ Vds	3810 pF @ 25 V
Gate-Source Voltage (Max.)	±16V
Gate Threshold Voltage (Max.) @ ID	2.5V @ 100µA
Gate Charge (Max.) @ Vgs	56 nC @ 4.5 V
FET Type	N-Channel
Drain-Source Voltage	40 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.9mOhm @ 42A, 10V
Continuous Drain Current @ 25°C	42A (Tc)