IXFH26N50 IXYS

IXFH26N50

N-Channel 500 V 26A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Images are for reference only.

SkyChip No.

X7FYE-IXFH26N50T

OPN#

IXFH26N50

Manufacturer

IXYS

Description

MOSFET N-CH 500V 26A TO247AD

Datasheet

Lifecycle Status

NRND

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· IXFx2xN50 Datasheet

· Ixys IC REACH

· Mult DEV Design 18/Oct/2024

· Mult DEV Mult Changes 13/May/2024

· High Voltage N-Channel MOSFET with Low On-Resistance & Fast Switching

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

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Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IPW50R140CPFKSA1	Infineon Technologies	0	$3.07	7M73R-IPW50R140CPFKSA1T
IPW50R250CPFKSA1	Infineon Technologies	0	$0	XLGQN-IPW50R250CPFKSA1T
IRFP31N50LPBF	Vishay Siliconix	449	$10.79	BV738-IRFP31N50LPBFT
IRFP360LCPBF	Vishay Siliconix	638	$12.46	S6PFW-IRFP360LCPBFT
IRFP360PBF	Vishay Siliconix	0	$4.97	59JBU-IRFP360PBFT
SIHG25N40D-GE3	Vishay Siliconix	2	$4.65	0QC1T-SIHG25N40D-GE3T
SIHG25N50E-GE3	Vishay Siliconix	450	$4.8	UZFTE-SIHG25N50E-GE3T
STW19NM50N	STMicroelectronics	313	$6.63	UTMD8-STW19NM50NT
STW20NM50FD	STMicroelectronics	301	$6.61	AX1R2-STW20NM50FDT
STW26NM60N	STMicroelectronics	596	$7.44	052OK-STW26NM60NT

Low Stock

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

381 pcs Fresh Stock,March 16

Pricing (USD)

Qty.	Unit Price	Ext. Price
30	$5.5494	$166.4833

* All prices are exclusive of tax, for reference only, and subject to change.

Supply Chain Inventory

281 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	HiPerFET™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247AD (IXFH)
Base Product Number	IXFH26
Input Capacitance (Max.) @ Vds	4200 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 4mA
Gate Charge (Max.) @ Vgs	160 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	500 V
Drain Source On-Resistance (Max.) @ ID, Vgs	200mOhm @ 13A, 10V
Continuous Drain Current @ 25°C	26A (Tc)