IXFX12N90Q IXYS

IXFX12N90Q

N-Channel 900 V 12A (Tc) 300W (Tc) Through Hole PLUS247™-3

Images are for reference only.

SkyChip No.

9W3MC-IXFX12N90QB

OPN#

IXFX12N90Q

Manufacturer

Description

MOSFET N-CH 900V 12A PLUS247-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IXF(H,T,X)12N90Q

· Ixys IC REACH

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Box

393 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Technology	MOSFET (Metal Oxide)
Series	HiPerFET™, Q Class
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-247-3 Variant
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	PLUS247™-3
Base Product Number	IXFX12
Input Capacitance (Max.) @ Vds	2900 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	5.5V @ 4mA
Gate Charge (Max.) @ Vgs	90 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	900 V
Drain Source On-Resistance (Max.) @ ID, Vgs	900mOhm @ 6A, 10V
Continuous Drain Current @ 25°C	12A (Tc)