NTBGS2D5N06C onsemi

NTBGS2D5N06C

N-Channel 60 V 27A (Ta), 169A (Tc) 3.7W (Ta), 136W (Tc) Surface Mount TO-263 (D2PAK)

Images are for reference only.

SkyChip No.

G3B1Q-NTBGS2D5N06CTR

OPN#

NTBGS2D5N06C

Manufacturer

Description

POWER MOSFET, 60 V, 2.5 M?, 224

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NTBGS2D5N06C

· onsemi RoHS

· onsemi REACH

· Mult DEV EOL 22/Dec/2023

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 366

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$3.5124

Ext. Price:$3.5124

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V, 12V
Power Dissipation (Max)	3.7W (Ta), 136W (Tc)
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	TO-263 (D2PAK)
Continuous Drain Current @ 25°C	27A (Ta), 169A (Tc)
Input Capacitance (Max.) @ Vds	3510 pF @ 30 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 175µA
Gate Charge (Max.) @ Vgs	45.4 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	60 V
Drain Source On-Resistance (Max.) @ ID, Vgs	2.5mOhm @ 35A, 12V

Ciss (pF)	3510
Configuration	Single
Coss (pF)	1950
Crss (pF)	35
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	169
Package Type	D2PAK7 (TO-263-7LD) 15.4x9.9x4.5
PD (Max.) (W)	3.7
Qg @ VGS=10V (nC)	45.4
Qgd @ VGS=4.5V (nC)	6.8
Qrr (nC)	77.5
RDS(on) (Max.) @ VGS=10V (mΩ)	2.65
V(BR)DSS (Min.) (V)	60
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	4