NTD4813NHT4G onsemi

NTD4813NHT4G

N-Channel 30 V 7.6A (Ta), 40A (Tc) 1.27W (Ta), 35.3W (Tc) Surface Mount DPAK

Images are for reference only.

SkyChip No.

EUP1X-NTD4813NHT4GTR

OPN#

NTD4813NHT4G

Manufacturer

onsemi

Description

MOSFET N-CH 30V 7.6A/40A DPAK

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· NTD4813NH, NVD4813NH

· onsemi RoHS

· onsemi REACH

· Material Declaration NTD4813NHT4G

· Multiple Devices Update 08/Apr/2011

· Multiple Devices 24/Jan/2011

· Mult Devices 29/Aug/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Standard Supply

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tape & Reel

Supply Chain Inventory

372 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	4.5V, 11.5V
Power Dissipation (Max)	1.27W (Ta), 35.3W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	DPAK
Base Product Number	NTD4813
Input Capacitance (Max.) @ Vds	940 pF @ 12 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	2.5V @ 250µA
Gate Charge (Max.) @ Vgs	10 nC @ 4.5 V
FET Type	N-Channel
Drain-Source Voltage	30 V
Drain Source On-Resistance (Max.) @ ID, Vgs	13mOhm @ 30A, 10V
Continuous Drain Current @ 25°C	7.6A (Ta), 40A (Tc)

Ciss (pF)	940
Configuration	Single
Coss (pF)	201
Crss (pF)	115
Description	N-Channel, Low-medium Voltage MOSFET, Logic Level
ID (Max.) (A)	40
Package Type	DPAK-3
PD (Max.) (W)	1.92
Qg @ VGS=10V (nC)	18.2
Qgd @ VGS=4.5V (nC)	3
Qrr (nC)	7
RDS(on) (Max.) @ VGS=10V (mΩ)	13
RDS(on) (Max.) @ VGS=4.5V (mΩ)	25.9
V(BR)DSS (Min.) (V)	30
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	2.5