NTP165N65S3H onsemi

NTP165N65S3H

N-Channel 650 V 19A (Tc) 142W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

1V6DT-NTP165N65S3HT

OPN#

NTP165N65S3H

Manufacturer

Description

POWER MOSFET, N-CHANNEL, SUPERFE

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NTP165N65S3H

· onsemi RoHS

· onsemi REACH

· Mult Dev 23/Oct/2023

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 345

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$3.5136

Ext. Price:$3.5136

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperFET® III
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	142W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Continuous Drain Current @ 25°C	19A (Tc)
Input Capacitance (Max.) @ Vds	1808 pF @ 400 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4V @ 1.6mA
Gate Charge (Max.) @ Vgs	35 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	165mOhm @ 9.5A, 10V

Ciss (pF)	1808
Configuration	Single
Coss (pF)	27
Crss (pF)	2.3
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	19
Package Type	TO-220-3
PD (Max.) (W)	142
Qg @ VGS=10V (nC)	35
Qrr (nC)	3600
RDS(on) (Max.) @ VGS=10V (mΩ)	165
V(BR)DSS (Min.) (V)	650
VGS (Max.) (V)	30
Vgs(th) (Max.) (V)	4