NTP6410ANG onsemi

NTP6410ANG

N-Channel 100 V 76A (Tc) 188W (Tc) Through Hole TO-220

Images are for reference only.

SkyChip No.

I58ZI-NTP6410ANGT

OPN#

NTP6410ANG

Manufacturer

Description

MOSFET N-CH 100V 76A TO220AB

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

21 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NTB6410AN, NTP6410AN

· onsemi RoHS

· onsemi REACH

· Material Declaration NTP6410ANG

· TO-220 Case Outline Update 18/Sep/2014

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 56

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$3.9456

Ext. Price:$3.9456

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	188W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220
Base Product Number	NTP6410
Input Capacitance (Max.) @ Vds	4500 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	120 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	100 V
Drain Source On-Resistance (Max.) @ ID, Vgs	13mOhm @ 76A, 10V
Continuous Drain Current @ 25°C	76A (Tc)

Ciss (pF)	4500
Configuration	Single
Coss (pF)	650
Crss (pF)	250
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	76
Package Type	TO-220-3
PD (Max.) (W)	188
Qg @ VGS=10V (nC)	120
Qgd @ VGS=4.5V (nC)	57
Qrr (nC)	300
RDS(on) (Max.) @ VGS=10V (mΩ)	13
V(BR)DSS (Min.) (V)	100
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	4