SQJ166ELP-T1_GE3 Vishay Siliconix

SQJ166ELP-T1_GE3

N-Channel 60 V 67A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

Images are for reference only.

SkyChip No.

AX2NT-SQJ166ELP-T1_GE3TR

OPN#

SQJ166ELP-T1_GE3

Manufacturer

Description

MOSFET N-CH 50V 50A TO252AA

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· SQJ166ELP Datasheet

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tape & Reel

469 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
RDS(on) Specification Drive Voltage	4.5V, 10V
Qualification	AEC-Q101
Power Dissipation (Max)	89W (Tc)
Package / Case	PowerPAK® SO-8
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PowerPAK® SO-8
Continuous Drain Current @ 25°C	67A (Tc)
Input Capacitance (Max.) @ Vds	1903 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	2.5V @ 250µA
Gate Charge (Max.) @ Vgs	29 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	60 V
Drain Source On-Resistance (Max.) @ ID, Vgs	9.7mOhm @ 20A, 10V