STP5NK60Z STMicroelectronics

STP5NK60Z

N-Channel 600 V 5A (Tc) 90W (Tc) Through Hole TO-220

Images are for reference only.

SkyChip No.

JL6XW-STP5NK60ZT

OPN#

STP5NK60Z

Manufacturer

Description

MOSFET N-CH 600V 5A TO220AB

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· ST(D,P)5NK60Z(FP)

· IRF630 View All Specifications

· High Voltage N-Channel Power MOSFET with Low On-Resistance & Avalanche Ruggedness

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 506

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$2.7840

Ext. Price:$2.7840

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperMESH™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	90W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220
Base Product Number	STP5NK60
Input Capacitance (Max.) @ Vds	690 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 50µA
Gate Charge (Max.) @ Vgs	34 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.6Ohm @ 2.5A, 10V
Continuous Drain Current @ 25°C	5A (Tc)

Description	600V 5A Zener-protected Power MOSFET, TO-220
Gate Charge	26nC
Grade	Industrial
ID @25°C	5A
Package Type	TO-220
Power Dissipation (Max.)	90W
RDS(on) @Vgs=10V	1.6Ω
Series	SuperMESH™