STW10NK80Z STMicroelectronics

STW10NK80Z

N-Channel 800 V 9A (Tc) 160W (Tc) Through Hole TO-247-3

Images are for reference only.

SkyChip No.

97Q85-STW10NK80ZT

OPN#

STW10NK80Z

Manufacturer

Description

MOSFET N-CH 800V 9A TO247-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

16 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· ST(P,W)10NK80Z(FP)

· STW10NK80Z View All Specifications

· IPG-PWR/14/8674 02/Sep/2014

· Standard outer labelling 15/Nov/2023

· High Voltage MDmesh MOSFET with Integrated Zener Protection for Fast Switching

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 254

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$5.5008

Ext. Price:$5.5008

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperMESH™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	160W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247-3
Base Product Number	STW10
Input Capacitance (Max.) @ Vds	2180 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 100µA
Gate Charge (Max.) @ Vgs	72 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	900mOhm @ 4.5A, 10V
Continuous Drain Current @ 25°C	9A (Tc)