TK370A60F,S4X(S Toshiba Semiconductor and Storage

TK370A60F,S4X(S

N-Channel 600 V 15A (Ta) 45W (Tc) Through Hole TO-220SIS

Images are for reference only.

SkyChip No.

6YXFZ-TK370A60F-S4X-SB

OPN#

TK370A60F,S4X(S

Manufacturer

Description

MOSFET N-CH

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· TK370A60F

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Bulk

195 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Technology	MOSFET (Metal Oxide)
Series	U-MOSIX
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	45W (Tc)
Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C
Mounting Type	Through Hole
Mfr. Package Type	TO-220SIS
Continuous Drain Current @ 25°C	15A (Ta)
Input Capacitance (Max.) @ Vds	2200 pF @ 300 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4V @ 2.04mA
Gate Charge (Max.) @ Vgs	55 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	370mOhm @ 7.5A, 10V