STP11NK40Z STMicroelectronics

STP11NK40Z

N-Channel 400 V 9A (Tc) 110W (Tc) Through Hole TO-220

Images are for reference only.

SkyChip No.

LRZP1-STP11NK40ZT

OPN#

STP11NK40Z

Manufacturer

Description

MOSFET N-CH 400V 9A TO220AB

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

13 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· ST(B,P)11NK40Z(FP)

· STP11NK40Z View All Specifications

· Mult Dev Assembly Site 25/Nov/2024

· Box Label Chg 28/Jul/2016

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 407

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$2.5056

Ext. Price:$2.5056

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperMESH™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220
Base Product Number	STP11
Input Capacitance (Max.) @ Vds	930 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 100µA
Gate Charge (Max.) @ Vgs	32 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	400 V
Drain Source On-Resistance (Max.) @ ID, Vgs	550mOhm @ 4.5A, 10V
Continuous Drain Current @ 25°C	9A (Tc)

Description	400V 9A Zener-protected Power MOSFET, TO-220
Gate Charge	32nC
Grade	Industrial
ID @25°C	9A
Package Type	TO-220
Power Dissipation (Max.)	110W
RDS(on) @Vgs=10V	550mΩ (Max.)
Series	SuperMESH™