FQP4N20L onsemi

FQP4N20L

N-Channel 200 V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

DI5PH-FQP4N20LT

OPN#

FQP4N20L

Manufacturer

onsemi

Description

MOSFET N-CH 200V 3.8A TO220-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FQP4N20L Datasheet

· onsemi RoHS

· onsemi REACH

· Material Declaration FQP4N20L

· Mult Dev EOL 23/Dec/2021

· Logo 17/Aug/2017

· MFG Site Addition 09/Mar/2020

· Mult Devices 24/Oct/2017

· TO220B03 Pkg Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Total Stock: 51

Available Qty 27

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$1.6704

Ext. Price:$1.6704

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$1.6704	$1.6704
50	$0.7978	$39.8880

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	QFET®
RDS(on) Specification Drive Voltage	5V, 10V
Power Dissipation (Max)	45W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FQP4
Input Capacitance (Max.) @ Vds	310 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	2V @ 250µA
Gate Charge (Max.) @ Vgs	5.2 nC @ 5 V
FET Type	N-Channel
Drain-Source Voltage	200 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.35Ohm @ 1.9A, 10V
Continuous Drain Current @ 25°C	3.8A (Tc)

Ciss (pF)	240
Configuration	Single
Coss (pF)	36
Crss (pF)	6
Description	N-Channel, Low-medium Voltage MOSFET, Logic Level
ID (Max.) (A)	3.8
Package Type	TO-220-3
PD (Max.) (W)	45
Qg @ VGS=10V (nC)	4
Qgd @ VGS=4.5V (nC)	1.9
Qrr (nC)	250
RDS(on) (Max.) @ VGS=10V (mΩ)	1350
RDS(on) (Max.) @ VGS=4.5V (mΩ)	1400
V(BR)DSS (Min.) (V)	200
VGS (Max.) (V)	2
Vgs(th) (Max.) (V)	2