HUF75332P3 onsemi

HUF75332P3

N-Channel 55 V 60A (Tc) 145W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

EWJGE-HUF75332P3T

OPN#

HUF75332P3

Manufacturer

onsemi

Description

MOSFET N-CH 55V 60A TO220-3

Datasheet

Lifecycle Status

Last Time Buy

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· HUF75332P3

· onsemi RoHS

· Material Declaration HUF75332P3

· Mult DEV EOL 08/Jan/2025

· Logo 17/Aug/2017

· Mult Dev Asembly Chg 7/May/2020

· Mult Devices 24/Oct/2017

· TO220B03 Pkg Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

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Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IRF3205PBF	Infineon Technologies	0	$1.47	S3XUZ-IRF3205PBFT
IRFZ14PBF	Vishay Siliconix	0	$1.1	JGEMP-IRFZ14PBFT
IRFZ44NPBF	Infineon Technologies	0	$1.41	4X9NU-IRFZ44NPBFT
IRFZ46NPBF	Infineon Technologies	0	$1.24	BBXB9-IRFZ46NPBFT
STP45NF06	STMicroelectronics	888	$0.74	LQDR5-STP45NF06T
STP55NF06	STMicroelectronics	0	$1.41	HWYC4-STP55NF06T
STP80NF55-06	STMicroelectronics	769	$2.98	BZ6VQ-STP80NF55-06T

Total Stock: 310

Available Qty 166

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$1.9008

Ext. Price:$1.9008

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$1.9008	$1.9008
50	$1.0291	$51.4560
100	$0.9517	$95.1744

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	UltraFET™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	145W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	HUF75332
Input Capacitance (Max.) @ Vds	1300 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	85 nC @ 20 V
FET Type	N-Channel
Drain-Source Voltage	55 V
Drain Source On-Resistance (Max.) @ ID, Vgs	19mOhm @ 60A, 10V
Continuous Drain Current @ 25°C	60A (Tc)

Ciss (pF)	1300
Configuration	Single
Coss (pF)	480
Crss (pF)	115
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	60
Package Type	TO-220-3
PD (Max.) (W)	145
Qg @ VGS=10V (nC)	40
Qgd @ VGS=4.5V (nC)	15
Qrr (nC)	140
RDS(on) (Max.) @ VGS=10V (mΩ)	19
V(BR)DSS (Min.) (V)	55
VGS (Max.) (V)	±20
Vgs(th) (Max.) (V)	4