FDP75N08A onsemi

FDP75N08A

N-Channel 75 V 75A (Tc) 137W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

BYC0C-FDP75N08AT

OPN#

FDP75N08A

Manufacturer

onsemi

Description

MOSFET N-CH 75V 75A TO220-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FDP75N08

· onsemi RoHS

· onsemi REACH

· Material Declaration FDP75N08A

· Mult Dev EOL 30/Jun/2022

· Logo 17/Aug/2017

· Mult Dev Asembly Chg 7/May/2020

· Tape and Box/Reel Barcode Update 07/Aug/2014

· Mult Devices 24/Oct/2017

· TO220B03 Pkg Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:SPP80P06PHXKSA1

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SkyChip No.:RAPJ8-TK40E06N1-S1XT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
SPP80P06PHXKSA1	Infineon Technologies	0	$4.2	9N38L-SPP80P06PHXKSA1T
AOT470	Alpha & Omega Semiconductor Inc.	0	$0.69	ASC8U-AOT470T
IRF2807ZPBF	Infineon Technologies	0	$2.68	4XN9U-IRF2807ZPBFT
IRFB3607PBF	Infineon Technologies	675	$1.58	WVGSS-IRFB3607PBFT
STP75NF75	STMicroelectronics	736	$3.08	8NTTN-STP75NF75T
STP76NF75	STMicroelectronics	972	$2.58	TLOCV-STP76NF75T
TK40E06N1,S1X	Toshiba Semiconductor and Storage	43	$1.61	RAPJ8-TK40E06N1-S1XT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

241 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	UniFET™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	137W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FDP75
Input Capacitance (Max.) @ Vds	4468 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	104 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	75 V
Drain Source On-Resistance (Max.) @ ID, Vgs	11mOhm @ 37.5A, 10V
Continuous Drain Current @ 25°C	75A (Tc)

Ciss (pF)	3437
Configuration	Single
Coss (pF)	738
Crss (pF)	86
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	75
Package Type	TO-220-3
PD (Max.) (W)	137
Qg @ VGS=10V (nC)	80
Qgd @ VGS=4.5V (nC)	24
Qrr (nC)	145
RDS(on) (Max.) @ VGS=10V (mΩ)	11
V(BR)DSS (Min.) (V)	75
VGS (Max.) (V)	±20
Vgs(th) (Max.) (V)	4