NVMTSC4D3N15MC onsemi

NVMTSC4D3N15MC

N-Channel 150 V 23A (Ta), 165A (Tc) 5W (Ta), 292W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Images are for reference only.

SkyChip No.

ZMXTP-NVMTSC4D3N15MCTR

OPN#

NVMTSC4D3N15MC

Manufacturer

Description

PTNG 150V IN CEBU DFNW 8X8 DUAL

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

17 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NVMTSC4D3N15MC

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1436

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$6.0576

Ext. Price:$6.0576

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	DUAL COOL®
RDS(on) Specification Drive Voltage	10V
Qualification	AEC-Q101
Power Dissipation (Max)	5W (Ta), 292W (Tc)
Package / Case	8-PowerTDFN
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Mfr. Package Type	8-TDFNW (8.3x8.4)
Continuous Drain Current @ 25°C	23A (Ta), 165A (Tc)
Input Capacitance (Max.) @ Vds	6514 pF @ 75 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 521µA
Gate Charge (Max.) @ Vgs	79 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	150 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.45mOhm @ 95A, 10V

Ciss (pF)	6514
Configuration	Single
Coss (pF)	1750
Crss (pF)	12.5
Description	N-Channel, Low-medium Voltage MOSFET, Standard Level
ID (Max.) (A)	165
Package Type	DFNW-8
PD (Max.) (W)	292
Qg @ VGS=10V (nC)	79
Qrr (nC)	194
RDS(on) (Max.) @ VGS=10V (mΩ)	4.5
V(BR)DSS (Min.) (V)	150
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	4.5