NTHL120N60S5Z onsemi

NTHL120N60S5Z

N-Channel 600 V 28A (Tj) 160W (Tc) Through Hole TO-247-3

Images are for reference only.

SkyChip No.

RF3HC-NTHL120N60S5ZT

OPN#

NTHL120N60S5Z

Manufacturer

Description

MOSFET N-CH 600V 22A TO3PN

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NTHL120N60S5Z

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 138

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$6.6240

Ext. Price:$6.6240

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperFET® V
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	160W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247-3
Continuous Drain Current @ 25°C	28A (Tj)
Input Capacitance (Max.) @ Vds	2088 pF @ 400 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 2.2mA
Gate Charge (Max.) @ Vgs	40 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	120mOhm @ 11.5A, 10V

Ciss (pF)	2088
Configuration	Single
Coss (pF)	35
Crss (pF)	4.7
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	28
Package Type	TO-247-3LD
PD (Max.) (W)	160
Qg @ VGS=10V (nC)	39
Qrr (nC)	3200
RDS(on) (Max.) @ VGS=10V (mΩ)	120
V(BR)DSS (Min.) (V)	600
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	4