IXFH36N55Q IXYS

IXFH36N55Q

N-Channel 550 V 36A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

Images are for reference only.

SkyChip No.

26Q1M-IXFH36N55QT

OPN#

IXFH36N55Q

Manufacturer

IXYS

Description

MOSFET N-CH 550V 36A TO247AD

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· Ixys IC REACH

· Mult DEV EOL/OBS 08/Nov/2023

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 (2015/863) Compliant
US ECCN	EAR99

Possible Alternative Parts

Part Number:IRFP360PBF

Manufacturer:Vishay Siliconix

Availability:0

Pricing$4.97

SkyChip No.:59JBU-IRFP360PBFT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IRFP360PBF	Vishay Siliconix	0	$4.97	59JBU-IRFP360PBFT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

168 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	HiPerFET™, Q Class
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	500W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247AD (IXFH)
Base Product Number	IXFH36
Input Capacitance (Max.) @ Vds	4500 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 4mA
Gate Charge (Max.) @ Vgs	128 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	550 V
Drain Source On-Resistance (Max.) @ ID, Vgs	160mOhm @ 500mA, 10V
Continuous Drain Current @ 25°C	36A (Tc)