IPD30N08S2L21ATMA1 Infineon Technologies

IPD30N08S2L21ATMA1

N-Channel 75 V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Images are for reference only.

SkyChip No.

PVG9Z-IPD30N08S2L21ATMA1TR

OPN#

IPD30N08S2L21ATMA1

Manufacturer

Description

MOSFET N-CH 75V 30A TO252-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

9 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IPD30N08S2L-21

· RoHS Certificate

· Cover Tape Width Update 17/Jun/2015

· Cover Tape Width Cancellation 14/Jul/2015

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 8705

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$0.9312

Ext. Price:$0.9312

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
RDS(on) Specification Drive Voltage	4.5V, 10V
Qualification	AEC-Q101
Power Dissipation (Max)	136W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PG-TO252-3-11
Base Product Number	IPD30N08
Input Capacitance (Max.) @ Vds	1650 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	2V @ 80µA
Gate Charge (Max.) @ Vgs	72 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	75 V
Drain Source On-Resistance (Max.) @ ID, Vgs	20.5mOhm @ 25A, 10V
Continuous Drain Current @ 25°C	30A (Tc)

Description	75V Enhancement Mode Power MOSFET
ID @25°C (Max.)	30A
Package Type	DPAK
QG @10V (Max.)	72nC
QG @10V (Typ.)	56nC
RDS(on) @10V (Max.)	20.5mΩ
Technology	OptiMOS™
VGS(th) (Max.)	2V
VGS(th) (Min.)	1.2V
VGS(th) (Typ.)	1.6V