ATP202-TL-H onsemi

ATP202-TL-H

N-Channel 30 V 50A (Ta) 40W (Tc) Surface Mount ATPAK

Images are for reference only.

SkyChip No.

1DOPL-ATP202-TL-HTR

OPN#

ATP202-TL-H

Manufacturer

onsemi

Description

MOSFET N-CH 30V 50A ATPAK

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· ATP202

· onsemi RoHS

· onsemi REACH

· Material Declaration ATP202-TL-H

· Mult Dev EOL 7/Apr/2021

· Lead Frame Material Update 09/Apr/2014

· Wafer Fab Site Addition 23/Dec/2014

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tape & Reel, Cut Tape

Supply Chain Inventory

314 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

4 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	4.5V, 10V
Power Dissipation (Max)	40W (Tc)
Package / Case	ATPAK (2 Leads+Tab)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	ATPAK
Base Product Number	ATP202
Input Capacitance (Max.) @ Vds	1650 pF @ 10 V
Gate-Source Voltage (Max.)	±20V
Gate Charge (Max.) @ Vgs	27 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	30 V
Drain Source On-Resistance (Max.) @ ID, Vgs	12mOhm @ 25A, 10V
Continuous Drain Current @ 25°C	50A (Ta)

Ciss (pF)	1650
Configuration	Single
Coss (pF)	285
Crss (pF)	160
Description	N-Channel, Low-medium Voltage MOSFET, Logic Level
ID (Max.) (A)	50
Package Type	DPAK (Single Gauge) / ATPAK
PD (Max.) (W)	40
Qg @ VGS=10V (nC)	27
Qgd @ VGS=4.5V (nC)	4
RDS(on) (Max.) @ VGS=10V (mΩ)	12
RDS(on) (Max.) @ VGS=4.5V (mΩ)	20
V(BR)DSS (Min.) (V)	30
VGS (Max.) (V)	20
Vgs(th) (Max.) (V)	2.6