STF12N65M5 STMicroelectronics

STF12N65M5

N-Channel 650 V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP

Images are for reference only.

SkyChip No.

WHV75-STF12N65M5T

OPN#

STF12N65M5

Manufacturer

Description

MOSFET N-CH 650V 8.5A TO220FP

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

14 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· STx12N65M5

· STF12N65M5 View All Specifications

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 45

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$1.2096

Ext. Price:$1.2096

Qty.	Unit Price	Ext. Price
1	$1.2096	$1.2096
50	$1.1977	$59.8848

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	MDmesh™ V
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	25W (Tc)
Package / Case	TO-220-5 Full Pack
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220FP
Base Product Number	STF12
Input Capacitance (Max.) @ Vds	900 pF @ 100 V
Gate-Source Voltage (Max.)	±25V
Gate Threshold Voltage (Max.) @ ID	5V @ 250µA
Gate Charge (Max.) @ Vgs	22 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	430mOhm @ 4.3A, 10V
Continuous Drain Current @ 25°C	8.5A (Tc)

Description	650V 8.5A Super-junction High Voltage MOSFET, TO-220
Gate Charge	20nC
Grade	Industrial
ID @25°C	8.5A
Package Type	TO-220, FullPak
Power Dissipation (Max.)	25W
RDS(on) @Vgs=10V	430mΩ (Max.)
Series	MDmesh™M5
Topology	PFC (Hard Switching)