IPD053N06NATMA1 Infineon Technologies

IPD053N06NATMA1

N-Channel 60 V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3

Images are for reference only.

SkyChip No.

20V79-IPD053N06NATMA1TR

OPN#

IPD053N06NATMA1

Manufacturer

Description

MOSFET N-CH 60V 18A/45A TO252-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

18 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IPD053N06N

· RoHS Certificate

· Cover Tape Width Update 17/Jun/2015

· MOSFET OptiMOS™ 60V N-Channel Spice Model

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1798

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$0.6144

Ext. Price:$0.6144

Qty.	Unit Price	Ext. Price
1	$0.6144	$0.6144

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
RDS(on) Specification Drive Voltage	6V, 10V
Power Dissipation (Max)	3W (Ta), 83W (Tc)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PG-TO252-3
Base Product Number	IPD053
Input Capacitance (Max.) @ Vds	2000 pF @ 30 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	2.8V @ 36µA
Gate Charge (Max.) @ Vgs	27 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	60 V
Drain Source On-Resistance (Max.) @ ID, Vgs	5.3mOhm @ 45A, 10V
Continuous Drain Current @ 25°C	18A (Ta), 45A (Tc)