NP100N04PUK-E1-AY Renesas Electronics Corporation

NP100N04PUK-E1-AY

N-Channel 40 V 100A (Tc) 1.8W (Ta), 176W (Tc) Surface Mount TO-263

Images are for reference only.

SkyChip No.

XHXYG-NP100N04PUK-E1-AYTR

OPN#

NP100N04PUK-E1-AY

Manufacturer

Description

MOSFET N-CH 40V 100A TO263

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

12 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· NP100N04PUK

· RoHS Compliance

· Label Change-All Devices 01/Dec/2022

· NP90N055MUK, NP90N055NUK Drawing

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH Non-Compliant (SVHC > 0.1%)
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1104

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tape & Reel, Cut Tape, SkyChip®Reel

* Quantity

Unit Price:$3.2640

Ext. Price:$3.2640

Qty.	Unit Price	Ext. Price
1	$3.2640	$3.2640

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Qualification	AEC-Q101
Power Dissipation (Max)	1.8W (Ta), 176W (Tc)
Package / Case	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	TO-263
Base Product Number	NP100N04
Input Capacitance (Max.) @ Vds	7050 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±20V
Gate Charge (Max.) @ Vgs	120 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	40 V
Drain Source On-Resistance (Max.) @ ID, Vgs	2.3mOhm @ 50A, 10V
Continuous Drain Current @ 25°C	100A (Tc)