FCH190N65F-F155 onsemi

FCH190N65F-F155

N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3

Images are for reference only.

SkyChip No.

ROHWL-FCH190N65F-F155T

OPN#

FCH190N65F-F155

Manufacturer

onsemi

Description

MOSFET N-CH 650V 20.6A TO247

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

17 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCH190N65F_F155

· onsemi RoHS

· onsemi REACH

· Material Declaration FCH190N65F-F155

· Dimension/Color Change 24/Feb/2021

· Logo 17/Aug/2017

· Mult Dev Assembly 15/Apr/2024

· Packing quantity increase 28/Dec/2020

· Mult Devices 24/Oct/2017

· Mult Device Part Number Chg 30/May/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

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Part Number	Manufacturer	Availability	Pricing	SkyChip No.
IPW60R165CPFKSA1	Infineon Technologies	240	$5.26	3JT1M-IPW60R165CPFKSA1T
IPW60R180C7XKSA1	Infineon Technologies	192	$3.9	QW5XT-IPW60R180C7XKSA1T
IPW60R190E6FKSA1	Infineon Technologies	129	$4.36	AXHIW-IPW60R190E6FKSA1T
R6024KNZ1C9	Rohm Semiconductor	3	$4.39	G33SD-R6024KNZ1C9T
SPW24N60C3FKSA1	Infineon Technologies	320	$6.08	4L6AT-SPW24N60C3FKSA1T
STW28N65M2	STMicroelectronics	367	$4.74	M3D8W-STW28N65M2T
TK20N60W,S1VF	Toshiba Semiconductor and Storage	31	$7.56	N2WU9-TK20N60W-S1VFT

Total Stock: 329

Available Qty 176

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$5.8464

Ext. Price:$5.8464

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$5.8464	$5.8464
10	$4.0829	$40.8288
450	$2.8937	$1302.1430
900	$2.8597	$2573.7525

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	FRFET®, SuperFET® II
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	208W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247-3
Base Product Number	FCH190
Input Capacitance (Max.) @ Vds	3225 pF @ 100 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	5V @ 2mA
Gate Charge (Max.) @ Vgs	78 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	190mOhm @ 10A, 10V
Continuous Drain Current @ 25°C	20.6A (Tc)

Ciss (pF)	2425
Configuration	Single
Coss (pF)	78
Crss (pF)	0.68
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	20.6
Package Type	TO-247-3
PD (Max.) (W)	208
Qg @ VGS=10V (nC)	60
Qgd @ VGS=4.5V (nC)	25
Qrr (nC)	515
RDS(on) (Max.) @ VGS=10V (mΩ)	190
V(BR)DSS (Min.) (V)	650
VGS (Max.) (V)	DC: ±20, AC: ±30
Vgs(th) (Max.) (V)	5