FCPF1300N80ZYD onsemi

FCPF1300N80ZYD

N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)

Images are for reference only.

SkyChip No.

Z8DO6-FCPF1300N80ZYDT

OPN#

FCPF1300N80ZYD

Manufacturer

onsemi

Description

MOSFET N-CH 800V 4A TO220F-3

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCPF1300N80Z

· onsemi RoHS

· onsemi REACH

· Material Declaration FCPF1300N80ZYD

· Mult Dev EOL 30/Jun/2022

· Logo 17/Aug/2017

· Mult Dev Assembly 11/Mar/2020

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:FCPF1300N80Z

Manufacturer:onsemi

Availability:245

Pricing$2.71

SkyChip No.:EU01D-FCPF1300N80ZT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
FCPF1300N80Z	onsemi	245	$2.71	EU01D-FCPF1300N80ZT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

280 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SuperFET® II
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	24W (Tc)
Package / Case	TO-220-3 Full Pack, Formed Leads
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220F-3 (Y-Forming)
Base Product Number	FCPF1300
Input Capacitance (Max.) @ Vds	880 pF @ 100 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 400µA
Gate Charge (Max.) @ Vgs	21 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.3Ohm @ 2A, 10V
Continuous Drain Current @ 25°C	4A (Tc)

Ciss (pF)	661
Configuration	Single
Coss (pF)	22.3
Crss (pF)	0.74
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	4
Package Type	TO-220-3
PD (Max.) (W)	24
Qg @ VGS=10V (nC)	16.2
Qgd @ VGS=4.5V (nC)	6.8
Qrr (nC)	2900
RDS(on) (Max.) @ VGS=10V (mΩ)	1300
V(BR)DSS (Min.) (V)	800
VGS (Max.) (V)	DC: ±20, AC: ±30
Vgs(th) (Max.) (V)	4.5