FCPF2250N80Z onsemi

FCPF2250N80Z

N-Channel 800 V 2.6A (Tc) 21.9W (Tc) Through Hole TO-220F-3

Images are for reference only.

SkyChip No.

DQ83B-FCPF2250N80ZT

OPN#

FCPF2250N80Z

Manufacturer

onsemi

Description

MOSFET N-CH 800V 2.6A TO220F

Datasheet

Lifecycle Status

Last Time Buy

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FCPF2250N80Z

· onsemi RoHS

· onsemi REACH

· Material Declaration FCPF2250N80Z

· Mult DEV EOL 08/Jan/2025

· Logo 17/Aug/2017

· Assembly and Test Qualification 26/Jul/2023

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:NTPF600N80S3Z

Manufacturer:onsemi

Availability:0

Pricing$1.34

SkyChip No.:58K9Y-NTPF600N80S3ZT

Part Number:R8003KNXC7G

Manufacturer:Rohm Semiconductor

Availability:347

Pricing$2.35

SkyChip No.:YENZD-R8003KNXC7GT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
NTPF600N80S3Z	onsemi	0	$1.34	58K9Y-NTPF600N80S3ZT
R8003KNXC7G	Rohm Semiconductor	347	$2.35	YENZD-R8003KNXC7GT

Last Time Buy

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

432 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

6 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	SuperFET® II
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	21.9W (Tc)
Package / Case	TO-220-3 Full Pack
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220F-3
Base Product Number	FCPF2250
Input Capacitance (Max.) @ Vds	585 pF @ 100 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 260µA
Gate Charge (Max.) @ Vgs	14 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	2.25Ohm @ 1.3A, 10V
Continuous Drain Current @ 25°C	2.6A (Tc)

Ciss (pF)	440
Configuration	Single
Coss (pF)	16
Crss (pF)	0.75
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	2.6
Package Type	TO-220-3 FullPak
PD (Max.) (W)	21.9
Qg @ VGS=10V (nC)	11
Qgd @ VGS=4.5V (nC)	4.3
Qrr (nC)	2200
RDS(on) (Max.) @ VGS=10V (mΩ)	2250
V(BR)DSS (Min.) (V)	800
VGS (Max.) (V)	DC: ±20, AC: ±30
Vgs(th) (Max.) (V)	4.5